Dual-source device architecture for self-diagnosis and correction of gate bias-stress instability in flexible transparent ZnO thin-film transistors
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第一作者:
Zhang, Yonghui
刊物名称:
JOURNAL OF ALLOYS AND COMPOUNDS
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论文题目:
Dual-source device architecture for self-diagnosis and correction of gate bias-stress instability in flexible transparent ZnO thin-film transistors
发表年度:
2020
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